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针对大功率半导体激光器面临的主要困难 ,提出并实现了一种隧道再生多有源区耦合大光腔高效大功率半导体激光器机理 .该机理能有效地解决光功率密度过高引起的端面灾变性毁坏、热烧毁和光束质量差等大功率激光器存在的主要问题 .采用低压金属有机化合物气相淀积方法生长了以碳和硅作为掺杂剂的GaAs隧道结、GaAs/In GaAs应变量子阱有源区和新型多有源区半导体激光器外延结构 ,并制备了高性能大功率 980nm激光器件 .三有源区激光器外微分量子效率达 2 .2 ,2A驱动电流下单面未镀膜激光输出功率高达 2 .5W .
Aiming at the main difficulties of high power semiconductor lasers, a mechanism of tunneling multi-active area coupling large cavity efficient high power semiconductor laser is proposed and implemented. This mechanism can effectively solve the catastrophic damage of end surface caused by high optical power density , Thermal burnout and poor beam quality of high-power laser exist the main problems of low-pressure metal organic compound vapor deposition method using growth of carbon and silicon GaAs tunneling junction as a dopant, GaAs / In GaAs strain quantum well active region And a new multi-active region semiconductor laser epitaxial structure, and a high-performance high-power 980nm laser device is prepared. The differential quantum efficiency of the laser in the three active regions reaches 2.2, and the output power of the uncoated laser on the single-side is up to 2 under the driving current of 2A. 5W.