论文部分内容阅读
本文假设埋层或外延N N~+结构过渡区的杂质浓度分布为高斯分布.在此情况下,对高低结界面的有效复合速度作了解析分析.解析分析的优点是能够区分少子反射中不同物理机构的作用.文中计算并讨论了两个这样结构的有效复合速度及它的两个分量与最大电场强度之间的关系.也对一些实验器件进行了计算,并与实验和Ram等的结果作了比较.
This paper assumes that the impurity concentration distribution in the transition region of buried or epitaxial NN ~ + structures is Gaussian, in which case the effective composite velocity at the interface of the high and low junctions is analyzed.The advantage of analytical analysis is the ability to distinguish between different physical The relationship between the effective recombination speed of two such structures and its maximum electric field strength is also calculated and discussed in this paper. Some experimental devices are also calculated and compared with the results of experiments and Ram et al. A