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用平行平板腐蚀器和两种不同的化学蚀剂(SF_6-O_2-Ar和SF_6-CCl_2F_2-Ar)研究离子注入掺磷多晶硅的干法腐蚀。以前发现,这两种方法腐蚀固态源扩散掺磷多晶硅的结果十分理想。使用两种不同的蚀剂产生不同的注入多晶硅剖面。蚀剂SF_6-CCl_2F_2-Ar导致尖锐的凹陷状豁口;而蚀剂SF_6-O_2-Ar则会造成条宽损耗,但不会产生豁口。本文提供了离子注入多晶硅的剖面样品,并对两种蚀剂产生不同剖面的可能机理进行讨论。通过在不同深度掺杂物浓和离子注入多晶硅的结构变化解释豁口。提出,腐蚀剂SP_6-O_2-Ar腐蚀产生的离子注入多晶硅,其剖面无豁口的原因是蚀剂SF_6-O_2-Ar中的氧和腐蚀表面的相互作用致使蚀剂对离子注入多晶硅中的杂质浓度不很敏感。本文提供了支持这种解释的简单实验的结果。
The dry etching of phosphorus-doped polysilicon for ion implantation was studied by parallel plate etalon and two different chemical etchants (SF_6-O_2-Ar and SF_6-CCl_2F_2-Ar). It was previously found that these two methods corrode the solid source diffusion-doped phosphorus polysilicon results are very satisfactory. Two different etchants were used to create different implanted polysilicon profiles. The etchant SF_6-CCl_2F_2-Ar resulted in a sharp concave notch, while the etchant SF_6-O_2-Ar caused a strip width loss without generating a notch. This article provides a cross-sectional sample of ion implanted polysilicon and discusses the possible mechanisms by which the two etches produce different profiles. The gap was explained by the structural changes in dopant concentration and ion implantation polysilicon at different depths. It is suggested that the ion-implanted polycrystalline silicon produced by the etchant SP_6-O_2-Ar has no gap in the profile because the interaction between the oxygen in the SF_6-O_2-Ar and the etching surface causes the concentration of the impurity in the ion-implanted polysilicon very sensitive. This article provides the results of a simple experiment that supports this interpretation.