The impact of polishing on germanium-on-insulator substrates

• 作 者: 林旺 阮育娇 陈松岩 李成 赖虹凯 黄巍
• 机 构: Department of Physics,Semiconductor Photonics Research Center,Xiamen University,
• 出 处: Journal of Semiconductors
• 发表日期: 2013年08期
• 关键词: polishing insulator bonding wafer systematically annealing symmetric FWHM implan

We prepared germanium-on-insulator(GOI) substrates by using Smart-CutTM and wafer bonding technology. The fabricated GOI is appropriate for polishing due to a strong bonding strength(2.4 MPa) and a sufficient bonding quality.We investigated mechanical polishing and chemical-mechanical polishing(CMP) systematically, and an appropriate polishing method—mechanical polishing combined with CMP-is obtained.As shown by AFM measurement,the RMS of GOI after polishing decreased to 0.543 nm.And the Ge peak profile of the XRD curve became symmetric,and the FWHM is about 121.7 arcsec,demonstrating a good crystal quality.

The fabricated GOI is suitable for polishing due to a strong bonding strength (2.4 MPa) and a sufficient bonding quality. We investigated mechanical polishing and chemical As shown by AFM measurement, the RMS of GOI after polishing decreased to 0.543 nm. And the Ge peak profile of the XRD curve symmetric, and the FWHM is about 121.7 arcsec, demonstrating a good crystal quality.