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热问题是制约垂直腔面发射半导体激光器(VCSEL)的关键难题之一。为改善垂直腔面发射激光器的热特性,提高输出功率,设计并制备了一种新型内腔接触式结构VCSEL。在出光孔径为16μm时,同时制备传统结构和新型结构两种器件并对其进行测试,传统结构VCSEL的阈值电流为11.5 mA,当注入电流为34 mA时,最大输出功率达到7.3 mW;新结构器件的阈值电流为9 mA,当注入电流为35 mA时,最大输出功率达到10.2 mW;新结构的阈值电流降低了21.7%,最大输出功率提高了28%。结果表明,这种内腔接触式电极结构有望改善器件的热特性和光电性能。
Thermal issues are one of the key challenges in constraining vertical cavity surface-emitting semiconductor lasers (VCSELs). In order to improve the thermal characteristics of vertical cavity surface emitting lasers and improve the output power, a new type of cavity contact structure VCSEL was designed and fabricated. When the aperture of the light is 16μm, both the traditional structure and the new structure are prepared and tested simultaneously. The threshold current of the traditional structure VCSEL is 11.5 mA, and the maximum output power is 7.3 mW when the injection current is 34 mA. The device has a threshold current of 9 mA and a maximum output power of 10.2 mW at an injection current of 35 mA. The threshold current of the new structure is reduced by 21.7% and the maximum output power is increased by 28%. The results show that the contact structure of this cavity is expected to improve the device thermal and optoelectronic properties.