论文部分内容阅读
本文讨论微米及亚微米级电子束曝光系统中各种透镜像差对合成透镜弥散斑的影响,分析了最佳电子束电流与末级透镜束会聚半角的关系。计算结果表明,计算模拟技术用于求取电子束曝光系统最佳参数是方便的,该方法很适合于求取个别系统的精确答案;电子枪电源及透镜电源稳定性的提高可以减小透镜像差弥散斑并提高可获得的最大电子束流;衍射像差在亚微米电子束曝光系统中有不能忽略的影响。
This paper discusses the effect of various lens aberrations on the speckle of synthetic lens in micron and submicron electron beam exposure systems and analyzes the relationship between the optimum electron beam current and the converging half angle of the final lens bundle. The calculation results show that it is convenient to calculate the simulation technique for obtaining the optimal parameters of the electron beam exposure system. This method is suitable for obtaining accurate answers of individual systems. The improvement of the stability of the electron gun power supply and lens power supply can reduce the lens aberration Diffuse spots and increase the maximum electron beam current available; diffraction aberrations have an insignificant effect in submicron electron beam exposure systems.