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测量了不同C或B含量经不同烧结温度制备的Si基半导体、单晶Si、单晶SiO2、石墨和纯多晶B样品的正电子寿命谱和符合正电子湮没辐射Doppler展宽谱。结果表明,石墨的商谱谱峰最高,SiO2的谱峰次之,B的谱峰最低。随着B,C和O原子序数的增加,与正电子湮没的电子动量增加。含20%的C和含100ppm的B的样品的商谱的谱峰最高;含100ppm的B的样品的谱峰次之;含1ppm的B的样品的谱峰最低。随着烧结温度的升高,含100ppm的B的Si基半导体样品的商谱降低,正电子寿命增长,缺陷开空间和浓度升高。
The positron lifetime spectra of the Si-based semiconductors, single-crystal Si, single-crystal SiO2, graphitic and pure polycrystalline B samples prepared with different C or B contents at different sintering temperatures were measured, and the Doppler broadening spectrum corresponding to positron annihilation radiation was measured. The results show that graphite has the highest peak of commercial spectrum, the second peak of SiO2 and the lowest peak of B. As the atomic numbers of B, C and O increase, the electron momentum associated with positron annihilation increases. The spectrum with 20% C and the sample with 100 ppm B had the highest spectrum; the spectrum with 100 ppm B had the highest spectrum; the sample with 1 ppm B had the lowest spectrum. As the sintering temperature is increased, the commercial spectrum of the Si-based semiconductor sample containing 100 ppm of B is reduced, the positron lifetime is increased, the defect open space and the concentration are increased.