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本文叙述了一个场效应电导测量氢化非晶硅(a—Si:H)带隙态密度的数据处理方法。该法放弃了对空间电荷区电荷、电场和电势分布的任何假设,采用电子占据局域态的费米统计分布和占据扩展态的玻耳兹曼分布,应用自洽的原理,能够在较大的能量范围内计算出a-Si:H的带隙态密度分布,运算过程中以电势V为自变量,减少了对电势、电场和电荷密度等量空间分布的计算,简化了分析,提高了精度,减少了运算量。应用该法计算出了a—Si:H样品的带隙态密度在费米能级以上0.1eV到0.45 eV能量范围内的分布,它的最小值在费米能级附近,约为10~(16)cm~(-3)·eV~(-1)。
This paper describes a field-effect conductance measurement of hydrogenated amorphous silicon (a-Si: H) band gap density data processing method. This method abandons any assumption of charge, electric field and potential distribution in the space charge region. It takes the Fermi statistical distribution of the electrons occupying the localized states and the Boltzmann distribution occupying the extended states. By applying the principle of self-consistency, Of the energy range calculated a-Si: H band gap density distribution, the operation of the potential V as an independent variable, reducing the potential, electric field and charge density isometric space distribution of the calculation, simplifying the analysis and improve the Accuracy, reducing the amount of computation. Using this method, the distribution of the band gap density of a-Si: H samples in the energy range 0.1 eV to 0.45 eV above the Fermi level was calculated. The minimum value of the band gap density was around 10 ~ 16) cm ~ (-3) · eV ~ (-1).