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在试制、生产晶体三极管过程中,或者晶体三极管在使用之前,一般都要测其BV_(EBO)特性.按BV_(EBO)的定义,以npn管为例,其测试原理图如图1所示.待测晶体三极管的基极(B)接负电位,其发射极(E)按正电位.使用JT-1或QT-2等仪器仪表进行测试,为叙述方便,我们称此法为“定义法”.不过,在实践中更为广泛应用的一种测试方法如图2(图2～7测试原理图仅标出三极管各电极所接电位的极性,其余部分同图1)所示,其待测三极管的C极(集电极)按负电位,三极管的E极接正电位,使用JT-1等仪器进行测试.我们规定此法为“通用法”.
In the trial production, the production of transistor, or transistor before use, it is necessary to measure the BV_ (EBO) characteristics. According to BV_ (EBO) definition, npn tube, for example, the test schematic shown in Figure 1 The base of the transistor under test (B) is connected to a negative potential and its emitter (E) is at a positive potential. For testing purposes, it is convenient to describe using a JT-1 or QT-2 instrument. Act. “However, in practice, a more widely used test method shown in Figure 2 (Figure 2 ~ 7 test schematic only shows the polarity of the transistor connected to the potential of the electrode, the rest shown in Figure 1) The transistor under test C (collector) by negative potential, the transistor E positive access potential, the use of JT-1 and other equipment for testing.We provide this method as a ”common law."