论文部分内容阅读
已用 S~+和Zn~+离子注入InAs和InSb制备具有红外探测器性能的p-n结二极管。在两种材料中都已制备出性能良好的平面型镶嵌式红外探测器。对于InAs已测得黑体探测度(D~*_(BB))为2×10~9厘米·赫1/2瓦和4％的均匀性。同样,InSb的D~*_(BB)值为1.3×10~(10)厘米·赫1/2瓦,而阵列中元件间均匀性为49％。在0.2和1.8兆电子伏之间得出了Zn~+注入InSb中的注入距离与能量关系的实验数据,并与LSS理论的预计值作了比较。理论上预计的注入距离要比实验所指的值较深一些,但是为了得到器件设计的有用曲线,这些差别是要足够小的。曲线的斜率指出,大部分粒子的终止主要是在这个能量范围内。
P-n junction diodes with infrared detector performance have been fabricated by implanting InAs and InSb with S ~ + and Zn ~ + ions. In both materials have been prepared with good performance flat mosaic infrared detector. Blackface detection (D ~ * _ (BB)) for InAs has been found to be 2 x 10 ~ 9 cm * Hz 1/2 watt and 4% uniformity. Similarly, D * * (BB) values for InSb are 1.3 × 10 ~ (10) cm · Hz 1/2 watt, while the uniformity among elements in the array is 49%. The experimental data of the relationship between the implantation distance and the energy of Zn ~ + implanted InSb was obtained between 0.2 and 1.8 MeV and compared with the predicted value of LSS theory. In theory, the expected implant distance is a little deeper than the experimental one, but these differences should be small enough to get a useful profile of the device design. The slope of the curve indicates that the termination of most of the particles is mainly within this energy range.