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利用X射线衍射(XRD)和X射线吸收近边结构(XANES)方法研究了在Si(100)衬底上及600℃温度条件下用分子束外延(MBE)共蒸发方法生长的MnxSi1-x磁性薄膜的结构.由XRD结果表明,只有在高Mn含量(8%和17%)样品中存在着Mn4Si7化合物物相.而XANES结果则显示,对于Mn浓度在0.7%到17%之间的MnxSi1-x样品,其Mn原子的XANES谱表现出了一致的谱线特征.基于多重散射的XANES理论计算进一步表明,只有根据Mn4Si7模型计算出的理论XANES谱才能够很好的重构出MnxSi1-x样品的实验XANES谱.这些研究结果说明在MnxSi1-x样品中,Mn原子主要是以镶嵌式的Mn4Si7化合物纳米晶颗粒存在于Si薄膜介质中,几乎不存在间隙位和替代位的Mn原子.
The magnetic properties of MnxSi1-x magnetically grown by the molecular beam epitaxy (MBE) co-evaporation method on a Si (100) substrate and at a temperature of 600 ° C were investigated by X-ray diffraction and X-ray absorption near- The results of XRD show that the Mn4Si7 phase exists only in the samples with high Mn content (8% and 17%), while the XANES results show that for the MnxSi1- x samples, the XANES spectra of Mn atoms showed consistent spectral characteristics.XANES calculations based on multiple scattering further demonstrated that only the theoretical XANES spectra calculated from the Mn4Si7 model were able to reconstruct the MnxSi1-x sample well The experimental results show that in the MnxSi1-x samples, Mn atoms are mainly in the form of embedded Mn4Si7 compound nanocrystalline particles in the Si thin film medium, there is almost no interstitial sites and substituting Mn atoms.