Tungsten oxide nanostructures:controllable growth and field emission

• 作 者: 岳双林 许婷婷 李伟 闫佶 一禾
• 机 构: Key Laboratory for Physics and Chemistry of Nanodevices,Department of Electronics,Peking University,
• 出 处: 半导体学报
• 发表日期: 2012年06期
• 关键词: controllable tungsten evaporation desorption oxidized adjusting bundles heating

Non-fully oxidized tungsten oxide(WO_(3-x)) nanostructures with controllable morphology were fabricated by adjusting the gas pressure in chemical vapor deposition.The comparative field emission(FE) measurements showed that the obtained W_(18)O_(49) nanowires have excellent FE property.The turn-on field was 7.1 V/μm for 10μA/cm~2 and the observed highest current density was 4.05 mA/cm~2 at a field of 17.2 V/μm.Good electron emission reproducibility was also observed during thermal evaporation and desorption testing.

Non-fully oxidized tungsten oxide (WO_ (3-x)) nanostructures with controlledlable morphology were fabricated by adjusting the gas pressure in chemical vapor deposition. The comparative field emission (FE) measurements showed that obtained W_ (18) O_ nanowires have excellent FE property. The turn-on field was 7.1 V / μm for 10 μA / cm 2 and the highest highest density was 4.05 mA / cm 2 at a field of 17.2 V / μm. Good electron emission reproducibility was also observed during thermal evaporation and desorption testing.