Passive Quenching Electronics for Geiger Mode 4H-SiC Avalanche Photodiodes

• 作 者: 刘飞 周东 陆海 陈敦军 任芳芳 张荣 郑有炓
• 机 构: Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials,and School of Electr
• 出 处: Chinese Physics Letters
• 发表日期: 2015年12期
• 关键词: breakdown exact photon fabricate quenching leakage illumination discrimination e

We design and fabricate 4H-S1 C UV avalanche photodiodes(APDs) with positive beveled mesa,which exhibit low leakage current and high avalanche gain when working in the Geiger mode.The single photon counting performance of the SiC APDs is studied by using a passive-quenching circuit.A new method to determine the exact breakdown voltage of the APD is proposed based on the initial emergence of photon count pulses.The photon count ratc and dark count rate of the APD are also evaluated as a function of quenching resistance.

We design and fabricate 4H-S1 C UV avalanche photodiodes (APDs) with positive beveled mesa, which exhibit low leakage current and high avalanche gain when working in the Geiger mode. The single photon counting performance of the SiC APDs is studied by using a passive Aquenching circuit. A new method to determine the exact breakdown voltage of the APD is proposed based on the initial emergence of photon count pulses. The photon count ratc and dark count rate of the APD are also evaluated as a function of quenching resistance.