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用溶胶－ 凝胶法制备了ＰＺＴ压电薄膜，研制了Ａｕ／ＰＺＴ／ＰＴ／ＴｉＯ２／ＮｉＴｉ／Ｓｉ（１００） 多层膜结构，用ＸＲＤ、ＡＦＭ、ＴＥＭ－ ＥＤＸ和ＳＡＤ 技术考察了薄膜的表面形貌、相结构演化、以及剖面的元素分布特性。结果表明：ＰＺＴ膜与ＮｉＴｉ 合金膜的结合良好、稳定；ＰＴ层的引入，使无定型ＰＺＴ薄膜在５５０℃退火后，转变为钙钛矿结构，降低了晶化温度，并有效地抑制焦碌石相的形成；ＮｉＴｉ 薄膜结晶良好；ＴｉＯ２ 过渡层显著改善了ＰＺＴ膜与ＮｉＴｉ 合金膜的结合性能；多层结构界面Ｎｉ 元素的扩散明显。介电、铁电性能测试结果表明ＰＺＴ薄膜仍保持了较高的介电常数、低损耗、低漏电流密度，ＰＺＴ－ ＮｉＴｉ 结构呈现电滞回线。ＰＺＴ与ＮｉＴｉ 的复合在工艺和性能上是可以兼容的。
PZT piezoelectric thin films were prepared by the sol-gel method and the Au / PZT / PT / TiO2 / NiTi / Si (100) multilayer films were prepared. The surface of the thin films was investigated by XRD, AFM, TEM- EDX and SAD techniques Morphology, phase structure evolution, and profile of the elemental distribution characteristics. The results show that the bonding between PZT film and NiTi alloy film is good and stable. When PT layer is introduced, the amorphous PZT film is annealed at 550 ℃ and transformed to perovskite structure, which reduces the crystallization temperature and effectively restrain the coke The formation of the stone phase, the formation of NiTi thin films, the improvement of the bonding properties between the PZT films and the NiTi alloy films, and the obvious diffusion of the Ni elements at the multilayer structure interface. Dielectric and ferroelectric properties test results show that the PZT thin film still maintains a high dielectric constant, low loss, low leakage current density, PZT-NiTi structure presents hysteresis loop. PZT and NiTi compound process and performance is compatible.