Performance of pentacene-based organic field effect transistors using different polymer gate dielect

• 作 者: 吴仁磊 程晓曼 郑宏 印寿根
• 机 构: Institute of Material Physics,Key Laboratory on Display Material and Photoelectric Devices,Ministry
• 出 处: Optoelectronics Letters
• 发表日期: 2009年06期
• 关键词: methacrylate dipole dielectric insulator drain transferred coated inorganic fabr

Pentacene-based organic field effect transistors(OFETs) are fabricated using poly(methyl methacrylate)(PMMA) and polyimide(PI) as gate dielectrics,respectively.The fabricated OFETs exhibit reasonable device characteristics.The field-effect mobility,threshold voltage,and on/off current radio are determined to be 3.214 ×10-2 cm2 /Vs,-28 V,and 1 ×103 respectively for OFETs with PMMA as gate dielectrics,and 7.306×10-3cm2 /Vs,-21 V,and 2 ×102 for OFETs with PI.Furthermore,the dielectric properties of gate insulator layer are tested and the dipole effect at the semiconductor/dielectrics interface is also analyzed by a model of energy level diagram.

Pentacene-based organic field effect transistors (OFETs) are fabricated using poly (methyl methacrylate) (PMMA) and polyimide (PI) as gate dielectrics, respectively. The fabricated OFETs exhibit reasonable device characteristics. Field- effect mobility, threshold voltage, and on / off current radio are determined to be 3.214 × 10-2 cm2 / Vs, -28 V, and 1 × 103 respectively for OFETs with PMMA as gate dielectrics, and 7.306 × 10-3 cm2 / Vs, -21 V, and 2 × 102 for OFETs with PI.Furthermore, the dielectric properties of gate insulator layers are tested and the dipole effect at the semiconductor / dielectrics interface is also analyzed by a model of energy level diagram.