,Silicon-based optoelectronic synaptic devices

• 作 者: Lei Yin Xiaodong Pi Deren Yang
• 机 构: State Key Laboratory of Silicon Materials and School of Materials Science and Engineering, Zhejiang
• 出 处: 中国物理B（英文版）
• 发表日期: 2020年7期
• 关键词: silicon optoelectronic synaptic devices neuromorphic computing

High-performance neuromorphic computing (i.e.,brain-like computing) is envisioned to seriously demand optoelectronically integrated artificial neural networks (ANNs) in the future.Optoelectronic synaptic devices are critical building blocks for optoelectronically integrated ANNs.For the large-scale deployment of high-performance neuromorphic computing in the future,it would be advantageous to fabricate optoelectronic synaptic devices by using advanced silicon (Si)technologies.This calls for the development of Si-based optoelectronic synaptic devices.In this work we review the use of Si materials to make optoelectronic synaptic devices,which have either two-terminal or three-terminal structures.A series of important synaptic functionalities have been well mimicked by using these Si-based optoelectronic synaptic devices.We also present the outlook of using Si materials for optoelectronic synaptic devices.