Temperature dependence of the thickness and morphology of epitaxial graphene grown on SiC (0001) waf

• 作 者: 郝昕 陈远富 李萍剑 王泽高 刘竞博 贺加瑞 樊睿 孙继荣 张万里 李言荣
• 机 构: State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Scien
• 出 处: Chinese Physics B
• 发表日期: 2012年04期
• 关键词: epitaxial wafers roughness terminated photoelectron modulated graphite etching t

Epitaxial graphene is synthesized by silicon sublimation from the Si-terminated 6H–SiC substrate. The effects of graphitization temperature on the thickness and surface morphology of epitaxial graphene are investigated. X-ray photoelectron spectroscopy spectra and atomic force microscopy images reveal that the epitaxial graphene thickness increases and the epitaxial graphene roughness decreases with the increase in graphitization temperature. This means that the thickness and roughness of epitaxial graphene films can be modulated by varying the graphitization temperature. In addition, the electrical properties of epitaxial graphene film are also investigated by Hall effect measurement.

Epitaxial graphene is synthesized by silicon sublimation from the Si-terminated 6H-SiC substrate. The effects of graphitization temperature on the thickness and surface morphology of epitaxial graphene are investigated. X-ray photoelectron spectroscopy spectra and atomic force microscopy images reveal that the epitaxial graphene This means that the thickness and roughness of epitaxial graphene films can be modulated by varying the graphitization temperature. In addition, the electrical properties of epitaxial graphene films are also investigated by Hall effect measurement.