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MESFET的微波大信号特性是设计功率放大器、振荡器的依据。本文以6GHz 3W内匹配双管芯功率合成大功率MESFET DX581为对象(单管芯栅宽3600μm,输出功率>1.7W),说明大信号特性的分析方法,并讨论其大信号特性。列举的大信号行为特征完全为实验所证实,从而为该器件的内匹配网络最优化设计提供了依据。为获得周期信号激励下大功率MESFET的稳态电压、电流波形,采用了加速达到稳态解的算法。对大信号下出现的非线性电容、电导、互导、击穿现象进行了适当的描述。对信号扫动到栅极正向区而出现的计算溢出和不收敛等问题,找到恰当的方法予以解决。这里介绍的分析方法适用于一大类非线性电路的研究,如双栅限幅放大器,变频器等。
MESFET microwave large signal characteristics is the basis for the design of power amplifiers, oscillators. In this paper, 6GHz 3W matched dual-die power synthesis high power MESFET DX581 (single-die gate width of 3600μm, output power> 1.7W), indicating the analysis of large signal characteristics and discuss the large signal characteristics. The enumeration of large-signal behavioral characteristics is completely verified by experiments, which provides the basis for the optimal design of the internal matching network of the device. In order to obtain the steady-state voltage and current waveforms of the high-power MESFET excited by the periodic signal, an algorithm for accelerating the steady state solution is adopted. The non-linear capacitance, conductance, transconductance and breakdown phenomena appearing in large signal are described properly. The problem of calculating overflow and non-convergence of the signals swept to the positive gate of the gate and finding the proper method to solve the problem. The analysis method introduced here is applicable to a large class of nonlinear circuits such as dual-gate limiting amplifiers, inverters and the like.