论文部分内容阅读
基于金属元素钯具有的催化特性,采用射频磁控溅射方法,在Si(111)衬底上沉积Pd:Ga2O3薄膜,然后在950℃下对薄膜进行氨化,制备出大量GaN纳米线.采用扫描电子显微镜(SEM)、X射线衍射(XRD)、透射电子显微镜(TEM)和高分辨透射电子显微镜(HRTEM)等技术手段对样品的结构、形貌和成分进行分析.结果表明,制备的样品为具有六方纤锌矿结构的单晶GaN纳米线,直径在20-60nm范围内,长度为几十微米,表面光滑无杂质,结晶质量较高.用光致发光光谱对样品的发光特性进行测试,分别在361.1、388.6和426.3nm处出现三个发光峰,且与GaN体材料相比近带边紫外发光峰发生了较弱的蓝移.对GaN纳米线的生长机制也进行了简单的讨论.
Based on the catalytic characteristics of metal elemental palladium, a large amount of GaN nanowires were prepared by depositing a Pd: Ga2O3 thin film on a Si (111) substrate by radio-frequency magnetron sputtering and then ammoniating the thin film at 950 ° C. The The structure, morphology and composition of the samples were analyzed by scanning electron microscopy (SEM), X-ray diffraction (XRD), transmission electron microscopy (TEM) and high resolution transmission electron microscopy (HRTEM) .The results showed that the prepared samples Is a single crystal GaN nanowire with a hexagonal wurtzite structure with a diameter in the range of 20-60 nm and a length of several tens of micrometers with a smooth surface without impurities and a high crystal quality.The luminescent properties of the sample are tested by photoluminescence , Three luminescence peaks appear at 361.1, 388.6 and 426.3nm, respectively, and there is a weak blue shift near the edge of the UV emission peak compared with that of the GaN bulk material. The growth mechanism of GaN nanowires is also briefly discussed .