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本文讨论了确定集成电路锁存通道的一些实验方法,这些方法已用于多种器件工艺。为了寻找锁存敏感区,用了一种可克服小面积束的固有剂量问题的特殊实验结构来进行局部激光辐照。用了两种红外成像方法来寻找激光激发锁存后的电流通道。有一种器件在出现锁存后由于电路的相互作用,电源电流变小,这表明用测量电源电流来检测集成电路的锁存并不是一种始终可靠的方法。
This article discusses some of the experimental methods used to determine the latch-up paths for integrated circuits that have been used in a variety of device technologies. In an effort to find a latch-up area, a special experimental structure that overcomes the inherent dose of the small area beam is used for localized laser irradiation. Two infrared imaging methods were used to find the laser-latched current path. There is a device that experiences a small supply current due to circuit interaction after latch-up, indicating that it is not always possible to measure the latch-up of an integrated circuit by measuring the supply current.