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采用低雷诺数κ-ε紊流模型,模拟了直拉法坩埚内加入间壁后硅熔体的流动和氧的输运情况。分析了不同的间壁长度、间壁位置、晶体转速、坩埚转速和温度边界条件对流场和浓度场的影响。结果表明:变化间壁的长度和位置,硅熔体流动有较大的变化;间壁的长度变短,熔体-晶体界面的氧浓度增加;增加间壁与坩埚中心轴的距离,熔体-晶体界面的氧浓度降低;增加晶体转速或坩埚转速能提高熔体-晶体界面氧浓度的径向分布均匀性;增加坩埚侧壁与熔体-晶体界面的温差,流动增强,熔体-晶体界面的氧浓度增大。
The low Reynolds number κ-ε turbulence model was used to simulate the silicon melt flow and oxygen transport in the Czochralski method after adding the partition wall. The influences of different partition length, partition position, crystal rotation speed, crucible rotation speed and temperature boundary conditions on the flow field and concentration field were analyzed. The results show that the length and position of the partition wall vary greatly with the flow of the silicon melt. The length of the partition wall is shortened, the oxygen concentration at the melt-crystal interface increases, the distance between the partition wall and the central axis of the crucible increases, and the melt-crystal interface Of the oxygen concentration decreases; increasing the speed of the crystal or the crucible can increase the radial distribution uniformity of the oxygen concentration at the melt-crystal interface; increasing the temperature difference between the crucible side wall and the melt-crystal interface, increasing the flow rate, Increased concentration.