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半导体光电化学已广泛用于化合物半导体的材料测试和器件工艺。本文总结了光电化学这一研究技术的最新进展;叙述了利用液结肖特基势垒的许多测定化合物半导体体内和表面特性的方法,列举了用这些方法测得的平带电势、禁带宽度、少子扩散长度、载流子浓度、多元化合物组分分布、晶体完整性、深能极、表面态、能带结构和复合特性等;也介绍了半导体光电化学的一些新兴领域,如辐射电化学、照相电化学和激光电化学等,强调了它们在新型器件工艺中的应用。
Semiconductor photoelectrochemistry has been widely used in compound semiconductor material testing and device technology. This paper summarizes the recent advances in the research of photoelectrochemistry; describes a number of methods for determining in-vivo and in-surface characteristics of compound semiconductors using liquid-junction Schottky barriers, lists the flat-band potentials measured by these methods, , The minority carrier diffusion length, the carrier concentration, the multicomponent composition distribution, the crystal integrity, the deep pole, the surface state, the band structure and the compound characteristic, etc .; also introduces some new fields of semiconductor photoelectrochemistry, , Photoelectrochemistry and laser electrochemistry, emphasizing their use in new device technologies.