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RFMEMS开关是低功耗、低损耗高频通讯电路和系统的关键部件,静电驱动RFMEMS开关因具有零直流功耗、开关时间短、结构简单、易集成的优点而成为研究热点,但是驱动电压高、薄膜应力变形严重、寿命短等问题制约了其发展,提出了一种基于单晶硅梁的推拉式静电RFMEMS开关结构,能够解决静电RFMEMS现有的缺陷。
RFMEMS switch is a key component of low-power, low-loss high-frequency communication circuits and systems. Electrostatic drive RFMEMS switch has become a research hotspot due to its advantages of zero DC power consumption, short switching time, simple structure and easy integration. However, the high driving voltage , Serious stress and deformation of thin film and short life span restrict its development. A push-pull electrostatic RFMEMS switch structure based on single crystal silicon beam is proposed to solve the existing defects of electrostatic RFMEMS.