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提出了亚微米栅FET的一个新的简单的噪声模型。它考虑了非稳态电子动力学效应,这种效应对亚微米栅FET是非常重要的。所述的这种模型可以估算本征FET的噪声系数,并可用作研究寄生元件影响的一种方法。理论预言与实验结果之间的比较证明了这种模型的有效性。给出了一些重要的结果,例如不同的沟道区域对输出噪声的贡献;栅长和寄生元件对噪声性能的影响等。
A new simple noise model of submicron gate FET is proposed. It takes into account the effects of unsteady electron dynamics, an effect that is very important for sub-micron gate FETs. The described model can estimate the noise figure of the intrinsic FET and can be used as a way of investigating the effects of parasitic elements. The comparison between theoretical predictions and experimental results proves the validity of this model. Some important results are given, such as the contribution of different channel regions to output noise, the effect of gate length and parasitic elements on noise performance, and so on.