InGaN metal-insulator-semiconductor photodetector using Al_2O_3 as the insulator

• 作 者: ZHANG KaiXiao MA AiBin JIANG JingHua XU Yan TAI Fei GONG JiangFeng ZOU Hua ZHU WeiHua
• 机 构: College of Science,Hohai University,College of Mechanics & Materials,Hohai University,
• 出 处: Science China(Technological Sciences)
• 发表日期: 2013年03期
• 关键词: photodetector insulator conduction insulation dielectric submitted magnitude con

In this paper,an InGaN metal-insulator-semiconductor(MIS) photodetector with an ultra-thin Al2O3 insulation layer deposited by atomic layer deposition(ALD) was studied.A high photoelectric responsivity of 0.25 A/W and a spectral responsivity rejection ratio of about three orders of magnitude at 1 V reverse bias were achieved for this MIS photodetector.The dominant carrier transport mechanism in the InGaN MIS photodetectors is submitted to the space charge limited current(SCLC) mechanism at high field and exhibits an Ohmic-like conduction at low electric field.The results indicate that the ultra-thin Al2O3 film deposited by the ALD technique can act as an excellent insulation dielectric for the InGaN photodetectors.

In this paper, an InGaN metal-insulator-semiconductor (MIS) photodetector with an ultra-thin Al2O3 insulation layer deposited by atomic layer deposition (ALD) was studied. A high light responsivity of 0.25 A / W and a spectral responsivity rejection ratio of about three orders of magnitude at 1 V reverse bias were achieved for this MIS photodetector. The dominant carrier transport mechanism in the InGaN MIS photodetectors is submitted to the space charge limited current (SCLC) mechanism at high field and exhibits an Ohmic-like conduction at low electric field. The results indicate that the ultra-thin Al2O3 film deposited by the ALD technique can act as an excellent insulation dielectric for the InGaN photodetectors.