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研究了同位镀铋膜法制备铋膜电极测定痕量Sn2+的电位溶出法。在0.1mol/L HAc-NaAc缓冲溶液(pH 4.8)中,通过开路富集于-1.2V进行电沉积,Sn2+与Bi3+被还原为单质富集于电极表面,在铋膜电极的电催化作用下再进行电位溶出,于-0.61V左右单质锡被氧化为Sn2+获得一灵敏的氧化溶出峰,其浓度与峰值成线性关系,线性范围为0.1—5.0mg/L,该方法的最低检出限为0.03mg/L(3σ)。利用该电极测定了水果罐头中痕量Sn2+的含量,并与国标方法作对比实验,结果表明该方法可用于实际样品分析。
The potential dissolution method for the determination of trace Sn2 + with bismuth film electrode prepared by co-plating bismuth plating method was studied. In 0.1 mol / L HAc-NaAc buffer solution (pH 4.8), electrodeposition was performed by enrichment at -1.2 V in the open circuit. Sn2 + and Bi3 + were reduced to the elemental enrichment on the electrode surface. Under the electrocatalysis of bismuth membrane electrode And then the potential of the dissolution, at about -0.61V elemental tin is oxidized to Sn2 + to obtain a sensitive oxidation peak, the concentration and peak linear relationship between the linear range of 0.1-5.0mg / L, the minimum detection limit of the method is 0.03 mg / L (3σ). The content of trace Sn2 + in canned cans was measured by this electrode, and compared with the national standard method, the results show that the method can be used for the actual sample analysis.