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制做硅整流管通常都是采用在硅片上经两次高温扩散分别渗入磷、硼杂质源,形成pn结和nn~+结。这种方法的缺陷是:高温扩散后的硅片会变脆,研磨时易造成碎片,而且多一次扩散,能源消耗加大,同时多一次清洗化学试量必然加大。经多次试验,改两次扩散为一次涂层扩散(下称一次扩散),在硅片表面上同时形成P~+P—NN~+结。
Production of silicon rectifier are usually used in silicon by two high-temperature diffusion into the phosphorus and boron impurity sources, the formation of pn junction and nn ~ + junction. The disadvantage of this method is that the silicon wafer after high-temperature diffusion will become brittle, debris will be easily generated when grinding, and more diffusion will lead to more energy consumption and more cleaning chemical tests will inevitably occur at the same time. After many tests, change the diffusion twice as a coating diffusion (hereinafter referred to as a diffusion), simultaneously forming P ~ + P-NN ~ + junction on the surface of the silicon wafer.