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利用室温下压电调制反射光(PzR)谱技术系统测量了N掺杂浓度为0.0%—3%的分子束外延生长GaN_xAs_(1-x)薄膜,并对图谱中所观察的光学跃迁进行了指认.在GaN0.005As0.995和GaN0.01As0.99薄膜的PzR谱中观察到此前只在椭圆偏振谱中才看到的N掺杂相关能态E1+Δ1+ΔN.当N掺杂浓度达到1%时,开始在PzR谱和PR谱中观测到Γ价带的轻重空穴分裂.给出室温下GaN_xAs_(1-x)材料的临界点能量随掺杂浓度的关系图,实验结果为E+和E两个跃迁同起源于L导带提供了室温下的佐证.
The PZR spectra at room temperature were used to measure the growth of GaN_xAs_ (1-x) thin films by molecular beam epitaxy with N doping concentration of 0.0% -3%. The observed optical transitions The N-doped states E1 + Δ1 + ΔN, which were previously observed only in the elliptical polarization spectra, were observed in the PzR spectra of GaN0.005As0.995 and GaN0.01As0.99 thin films.When the N doping concentration reached 1%, the light and heavy hole splits of the Γ valence band were observed in the PzR spectrum and the PR spectrum.The critical energy of the GaN_xAs_ (1-x) material at room temperature was plotted as a function of doping concentration, and the experimental results were E + And E two transitions originate from the L conduction band provides evidence at room temperature.