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采用溶胶–凝胶旋涂法在玻璃衬底上制备了不同厚度的ZnO:Li半导体薄膜。采用X射线衍射仪和扫描电子显微镜分析了薄膜的物相结构和形貌,用Hall效应测量仪常温下测量薄膜的电学性能。结果表明:该薄膜具有高度的c轴择优取向性,所有薄膜只有1个(002)衍射峰,并且衍射强度随着膜厚增加而加强。ZnO:Li薄膜晶粒呈柱状,晶粒直径不随膜厚改变,约为40nm。ZnO:Li薄膜为p型导电,薄膜越厚,其电学性能与晶体结晶越好,(002)方向择优取向生长越明显。电阻率随着膜厚增加而减小,最小的电阻率为1.32×102(Ω·cm)。载流子–空穴浓度为3.546×1016/cm3,迁移率为1.34cm2/(V·s)。ZnO:Li薄膜在可见光范围内的透过率达到90%,薄膜对紫外光的吸收与厚度有关。
Different thickness ZnO: Li semiconductor films were prepared on glass substrate by sol-gel spin coating. The phase structure and morphology of the films were analyzed by X-ray diffraction and scanning electron microscopy. The Hall effect meter was used to measure the electrical properties of the films at room temperature. The results show that the film has a high degree of c-axis preferred orientation with only one (002) diffraction peak for all films and the diffraction intensity increases as film thickness increases. The grain size of ZnO: Li thin film is columnar, the grain diameter does not change with the film thickness, about 40nm. ZnO: Li thin film is p-type conductivity, the thicker the film, the better its electrical properties and crystal crystallization, the more preferred (002) direction oriented growth more obvious. The resistivity decreases as the film thickness increases, and the minimum resistivity is 1.32 × 102 (Ω · cm). The carrier-hole concentration was 3.546 × 10 16 / cm 3, and the mobility was 1.34 cm 2 / (V · s). The transmittance of ZnO: Li film in the visible range reaches 90%. The absorption of UV light by the film is related to the thickness.