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外界水汽和离子的扩散对集成电路和传感器等器件的性能及使用寿命有很大影响 ,利用无机钝化材料阻挡水汽和离子的扩散是常用的提高器件寿命和稳定性的方法。本文采用PECVD方法在较低的衬底温度条件下淀积碳化硅薄膜 ,利用各种方法研究了碳化硅薄膜的防潮性能。实验证明 ,碳化硅薄膜是一种良好的水汽扩散阻挡材料 ,其防潮能力达到甚至超过了集成电路生产中常用的氮化硅薄膜。并且 ,低温碳化硅薄膜具有非常好的化学稳定性和抗刻蚀能力 ,在各种微加工工艺中有广泛的应用前景。
The diffusion of external water vapor and ions greatly affects the performance and the service life of devices such as integrated circuits and sensors. The use of inorganic passivation materials to block the diffusion of water vapor and ions is a commonly used method to increase the device lifetime and stability. In this paper, PECVD method was used to deposit silicon carbide films at low substrate temperature, and various methods were used to study the moisture resistance of silicon carbide films. Experiments show that silicon carbide film is a good water vapor diffusion barrier material, its moisture resistance to meet or even exceed the silicon nitride film commonly used in the production of integrated circuits. And, low temperature silicon carbide film has very good chemical stability and anti-etching ability, in a variety of micro-processing technology has a wide range of applications.