【摘 要】
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The effects of various notch structures on direct current(DC)and radio frequency(RF)performances of AlGaN/GaN high electron mobility transistors(HEMTs)are analy
【机 构】
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The State Key Discipline Laboratory of Wide Bandgap Semiconductor Technology,School of Microelectron
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The effects of various notch structures on direct current(DC)and radio frequency(RF)performances of AlGaN/GaN high electron mobility transistors(HEMTs)are analyzed.The AlGaN/GaN HEMTs,each with a 0.8-pm gate length,50-pm gate width,and 3-pm source-drain distance in various notch structures at the AlGaN/GaN barrier layer,are manufactured to achieve the desired DC and RF characteristics.The maximum drain current(Ids.max),pinch-off voltage(Vth),maximum transconductance(gm),gate voltage swing(GVS),subthreshold current,gate leakage current,pulsed Ⅰ-Ⅴ characteristics,breakdown voltage,cut-off frequency(fT),and maximum oscillation frequency(fmax)are investigated.The results show that the double-notch structure HEMT has a 30％improvement of gate voltage swing,a 42.2％improvement of breakdown voltage,and a 9％improvement of cut-off frequency compared with the conventional HEMT.The notch structure also has a good suppression of the current collapse.
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