论文部分内容阅读
在一钯扩散的氢和砷蒸汽混合气流下进行了砷化镓的液相外延生长。发现在混合气流下的液相外延对于制备高质量的接近化学计量组份的砷化镓外延层是有效的。采用混合气流获得的未掺杂外延层的载流子浓度和77°K 时迁移率分别为10~(12)厘米~(-3)的数量级和170,000厘米~2/伏·秒。在混合气流下生长的外延层的杂质浓度比起在氢气流下生长的大约少5～10倍。室温下的光电容测量表明,外延层中有1.36微米的深能级。这可能与砷空位或铜占据砷空位有关。
Liquid-phase epitaxial growth of gallium arsenide was performed under a palladium-mixed gas flow of hydrogen and arsenic vapor. Liquid phase epitaxy under mixed gas flow was found to be effective for producing high quality GaAs epitaxial layers close to the stoichiometric composition. The carrier concentration of the undoped epitaxial layer obtained with the mixed gas flow and the mobility at 77 ° K are on the order of 10 to (12) cm -3 and 170,000 cm -2 / V · sec, respectively. The epitaxial layer grown under a mixed gas flow has an impurity concentration that is about 5 to 10 times less than that grown under a hydrogen gas flow. Photo-capacitance measurements at room temperature show a deep level of 1.36 microns in the epitaxial layer. This may be related to arsenic vacancies or copper arsenic vacancies.