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通过低压化学气相沉积方法,在Si(100)衬底上生长了高度择优取向的3C-SiC (100)薄膜。SiC (200)峰的摇摆曲线表明SiC薄膜的结晶质量随着丙烷气体引入温度(Tgi)的升高而增加。选区电子衍射像表明高Tgi下生长的薄膜比低Tgi下生长的薄膜具有更好的取向。典型的SiC薄膜高分辨像中观察到了孪晶和层错。表面场发射扫描电镜像表明随着Tgi的升高,SiC薄膜的表明形貌发生了改变。
A highly preferred 3C-SiC (100) thin film was grown on a Si (100) substrate by a low pressure chemical vapor deposition method. The rocking curve of the SiC (200) peak shows that the crystalline quality of SiC films increases with the increase of propane gas introduction temperature (Tgi). Selective electron diffraction images indicate that films grown under high Tgi have a better orientation than films grown under low Tgi. Twins and faults are observed in the typical high resolution SiC films. Surface field emission scanning electron microscopy shows that as the Tgi increases, the morphology of the SiC thin film shows a change in morphology.