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在光子晶体垂直腔面发射激光器中采用质子注入工艺,使台面工艺变成纯平面工艺,降低了光子晶体结构制备难度,简化了器件制备,提高了器件的均匀性。质子注入型光子晶体垂直腔面发射激光器中的光子晶体结构,在电流限制孔小于光子晶体缺陷孔时,仍能控制器件光束及模式特性,该结果可用于优化器件阈值电流,制备高性能低阈值电流基横模器件。实验所设计制备的器件,在注入电流小于12.5 m A时,阈值电流2.1 m A,出光功率大于1 m W,远场发射角小于7°,有效验证了光子晶体结构在质子注入型面发射激光器中的光束改善及模式控制作用。
The photonic crystal vertical cavity surface emitting laser using proton injection process, the tabletop process into a purely planar process, reducing the photonic crystal structure preparation difficulty, simplifying the device preparation and improve the uniformity of the device. The photonic crystal structure in the proton injected photonic crystal vertical cavity surface emitting laser can still control the device beam and mode characteristics when the current limiting hole is smaller than the photonic crystal defect hole. This result can be used to optimize the threshold current of the device to prepare a high performance low threshold Current base horizontal mode device. Experimental design and preparation of the device, the injection current of less than 12.5 m A, the threshold current 2.1 m A, the optical power is greater than 1 mW, the far-field emission angle is less than 7 °, effectively validated the photonic crystal structure proton injection surface-emitting lasers In the beam to improve and mode control role.