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研究了快速热退火时离子注入硅中磷的扩散。我们依靠注入的剂量发现了两种截然不同的扩散行为。低剂量(1×10~(14)cm~(-2))P~+注入硅发现有一个剖面再分布,该再分布在900℃温度下退火10秒钟即可观察到,但在800～1150℃温度范围与温度无关。这个初给再分布比起通常的扩散系数数质所预计的要快得多。高剂量(2×10~(15)cm~(-2))P~+注入硅经短时(10秒)退火后掺杂剂分布的变宽现象与温度有密切关系,其实验分布与浓度增强扩散分布是一致的。
The diffusion of phosphorus in silicon by ion implantation during rapid thermal annealing was investigated. We found two distinct divergent behaviors depending on the dose injected. A section profile redistribution was observed at low dose (1 × 10 ~ (14) cm ~ (-2)) P ~ + implantation. The redistribution can be observed by annealing at 900 ℃ for 10 seconds. However, 1150 ℃ temperature range has nothing to do with the temperature. This initial redistribution is much faster than expected from the usual diffusion coefficient number. The broadening of the dopant distribution after high-dose (2 × 10-15 cm -2) P ~ + implantation of silicon annealed for a short time (10 seconds) is closely related to the temperature. The experimental distribution and concentration Enhanced diffusion distribution is consistent.