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Flash闪存是一种非易失性的存储器件,随着工艺尺寸的不断减小,存储容量需求的不断增加,存储可靠性与寿命成为Flash生产与应用过程中最严重的两个挑战.基于多级(MLC,Multilevel Cell)“与非(NAND)型”Flash的层级结构特征与读写操作特性,构造了一种基于正交映射的纠错编码方法,给出其编解码原理与结构,并分析其纠错能力.在此基础上,分析了该编码方法在Flash存储系统中的两种典型应用场景,即分布式多用户共享存储以及历史数据的无差错恢复.此外,Flash存储单元的可靠性受擦除次数的限制,其寿命相当有限,该编码方法可以有效地利用坏块来提高Flash的整体生命周期.分析结果表明:不改变整体结构,只需对编码模块进行简单调整,即可实现多种实际应用需求.
Flash flash memory is a non-volatile memory device, and as the size of the process shrinks, the demand for storage capacity increases, and the storage reliability and lifetime become the two most serious challenges in Flash production and application. (MLC, Multilevel Cell) “NAND ” Flash and the characteristics of read and write operations, an orthogonal code based error correction coding method is constructed, and its coding and decoding principle and structure , And analyzes its error correction capability.On the basis of this, it analyzes two typical application scenarios of the encoding method in Flash storage system, namely, distributed multi-user shared storage and error-free recovery of historical data.In addition, Flash memory cell The reliability of which is limited by the number of times of erasing and its lifetime is quite limited.The bad coding method can effectively use bad blocks to improve the overall life cycle of Flash.The analysis results show that simply changing the coding module without changing the overall structure, You can achieve a variety of practical application requirements.