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为克服铜易氧化造成薄膜电阻增加、机械性能下降的缺点，采用离子注入技术对铜薄膜表面进行改性研究。离子注入后进行了氧化试验，并结合Ｘ射线衍射和卢瑟福背散射进行了分析。结果表明，离子注入对原有薄膜的电阻影响是很小的； 随注入剂量的增大，抗氧化能力提高；离子注入不但改善了铜薄膜的抗氧化能力，而且氧化行为及氧化层的结构也发生了变化，未经注入的铜薄膜形成的氧化铜以Ｃｕ２Ｏ为主，注入后氧化铜则为Ｃｕ２Ｏ 和ＣｕＯ 的复合结构。离子注入提高了铜薄膜抗氧化性能。
In order to overcome the shortcoming of the increase of the sheet resistance and the decrease of the mechanical properties caused by the easy oxidation of copper, the surface modification of the copper thin film is studied by the ion implantation technology. Oxidation experiments were performed after ion implantation and analyzed by X-ray diffraction and Rutherford backscattering. The results show that the ion implantation has little effect on the resistance of the original film. With the increase of implantation dose, the anti-oxidation ability is improved. The ion implantation not only improves the anti-oxidation ability of the copper film, but also the oxidation behavior and the structure of the oxide layer The copper oxide formed by the un-injected copper film is mainly Cu2O, and the copper oxide is the composite structure of Cu2O and CuO after the copper oxide is injected. Ion implantation improves the oxidation resistance of copper film.