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两管集中元件电器模型和二维有限元件分析法都被用来研究CMOS结构的闭锁现象。等效电路模型提供了闭锁效应的简明图视,而二维模型则给闭锁效应以更多的物理上和定量上的解释。对于p-n-p-n的闭锁效应规范化的判断标准是在等效电路的基础上推导出来的。二维模型进一步确定了规范标准所描述的闭锁效应的触发条件。另外,二维模型模拟了整个的闭锁过程,包括动态触发阶段,同时测定了p-n-p-n器件固有的平衡态I-V特性。
Two-tube lumped element electrical model and two-dimensional finite element analysis have been used to study the occlusion of CMOS structures. The equivalent circuit model provides a concise diagram of the blocking effect, whereas the two-dimensional model gives more physical and quantitative explanations of the blocking effect. The standardization criterion for the blocking effect of p-n-p-n is derived from the equivalent circuit. The two-dimensional model further defines the triggering conditions for the blocking effect described by the specification. In addition, the two-dimensional model simulates the entire blocking process, including the dynamic triggering phase, and simultaneously determines the inherent equilibrium I-V characteristics of the p-n-p-n device.