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一引言随着微电子器件和集成电路的不断发展,对抗蚀剂性能的要求也不断提高,既要求抗蚀剂具有高分辨率、高灵敏度,又要求与衬底材料有好的附着力,并能耐干法腐蚀。目前所用的光致抗蚀剂通常是用有机聚合物做成的,正性抗蚀剂是通过曝光使聚合物主链断开,从而使曝光区的分子量减小,溶解度增大;负性抗蚀剂则是通过曝光使聚合物交联,从而使分子量增大,溶解度降低。根据溶解度的不同,就可将曝光区和非曝光区区别开。要简单地用这些抗蚀剂满足以上的要求是困难的。如正性抗蚀剂的主链含有弱键,对辐照不稳定,这样,
I. INTRODUCTION With the continuous development of microelectronic devices and integrated circuits, the requirements on resist performance are also increasing. Both the high resolution and the high sensitivity of the resist are required, and the good adhesion to the substrate material is required. Can be resistant to dry etching. Currently used photoresist is usually made of organic polymer, the positive resist is exposed through the main chain of the polymer is broken, so that the exposed area of the molecular weight decreases, increased solubility; negative resistance The etchant then crosslinks the polymer by exposure, thereby increasing the molecular weight and decreasing the solubility. Depending on the solubility, the exposed and non-exposed areas can be distinguished. It is difficult to simply satisfy the above requirements with these resists. Such as the positive resist contains weak bonds in the main chain, instability of the irradiation, so,