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基于液晶光学相控阵(LCOPA)电极基板的子阵列连接方案,利用电子束直写和激光直写混合光刻技术,进行了通光区域电极条纹、外围电路和子阵列联络孔的微纳米加工工艺研究。结果表明利用激光直写技术,可以形成最小线宽0.5μm的液晶光学相控阵电极图案,曝光时长48 min,具备可制造性。利用富含导电颗粒的SX AR-PC5000/90.1涂层,可以有效解决电子束在绝缘玻璃基底上直写时由电荷积累所产生的电子束曝光场拼接偏移与火花放电等问题,保证了电子束直接曝光子阵列电极上下导电层之间的联络孔套刻精度。利用特定电子束直写对准标记,解决了绝缘体表面在混合光刻中套刻对位精度问题。
Based on the sub-array connection scheme of liquid crystal optical phased array (LCOPA) electrode substrate, the micro-nano processing technology of the electrode stripe in the light-passing region, the peripheral circuit and the contact hole of the sub-array is carried out by using electron beam direct writing and laser direct writing hybrid lithography the study. The results show that the laser direct writing technology can form a minimum width of 0.5μm liquid crystal optical phased array electrode pattern, the exposure time of 48 min, with manufacturability. The use of SX AR-PC5000 / 90.1 coating containing conductive particles can effectively solve the problems of stitching deviation and spark discharge of the electron beam exposure field caused by charge accumulation when the electron beam is directly written on the insulating glass substrate, ensuring that electrons Direct exposure of sub-array electrode contact layer between the upper and lower conductive layer overlay accuracy. The use of a special electron beam direct write alignment marks, to solve the insulator surface in hybrid lithography engraved alignment accuracy problem.