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用MOS管作为负载电阻的缺点是,要获得低的维持功耗,必须是一个很高的电阻,而这就要求器件面积很大。在动态存储器里通过取消负载电阻来避开这个问题,单元的状态依靠寄生的结点电容的瞬态作用暂时保留着,直到数据再生周期时再重新建立。用这种方法获得高单元密度是以降低操作速度和使电子线路复杂化作为代价的。如果采用电荷泵的方法就可以保留静态存储器简单和高速度性能潜力,并且硅片面积的利用可以与动态单元相比拟。同时维持功耗大大减小。
The disadvantage of using a MOSFET as a load resistor is that it must be a very high resistance to achieve low sustain power, which requires a large device area. Avoiding this problem by deactivating the load resistance in dynamic memory, the state of the cell is temporarily retained by the transient action of the parasitic junction capacitance until it is re-established during the data reproduction cycle. Achieving high cell density in this way comes at the cost of slowing down the operation and complicating the electronics. The potential of simple and high speed performance of static memory can be retained if using a charge-pump approach, and the utilization of the silicon area can be compared to dynamic cells. While maintaining the power consumption is greatly reduced.