【摘 要】
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Recently, ZrTe5 has received a lot of attention as it exhibits various topological phases, such as weak and strongtopological insulators, a Dirac semimetal, a t
【机 构】
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State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, Peking University, Beijin
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Recently, ZrTe5 has received a lot of attention as it exhibits various topological phases, such as weak and strongtopological insulators, a Dirac semimetal, a three-dimensional quantum Hall state, and a quantum spin Hall insulator in the monolayer limit. While most of studies have been focused on the three-dimensional bulk material, it is highly desired to obtain nanostructured materials due to their advantages in device applications. We report the synthesis and characterizations of ZrTe5 nanoribbons. Via a silicon-assisted chemical vapor transport method, long nanoribbons with thickness as thin as20 nm can be grown. The growth rate is over an order of magnitude faster than the previous method for the bulk crystals. Moreover, transport studies show that the nanoribbons are of low unintentional doping and high carrier mobility, over30000 cm2/V·s, which enable reliable determination of the Berry phase ofπin the ac plane from quantum oscillations. Our method holds great potential in growth of high quality ultra-thin nanostructures of ZrTe5.
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