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陈述了一个基于单端共栅与共源共栅级联结构的超宽带低噪声放大器(LNA).该LNA用标准90-nm RF CMOS工艺实现并具有如下特征:在28.5~39 GHz频段内测得的平坦增益大于10 d B;-3 d B带宽从27~42 GHz达到了15 GHz,这几乎覆盖了整个Ka带;最小噪声系数(NF)为4.2 d B,平均NF在27~42 GHz频段内为5.1 d B;S11在整个测试频段内小于-11 d B.40 GHz处输入三阶交调点(IIP3)的测试值为+2 d Bm.整个电路的直流功耗为5.3 m W.包括焊盘在内的芯片面积为0.58 mm×0.48 mm.
An ultra wideband low noise amplifier (LNA) based on single-ended cascode and cascode cascades is presented and implemented using a standard 90-nm RF CMOS process with the following characteristics: Measured in the 28.5-39 GHz band Has a flat gain of more than 10 d B; the -3 dB bandwidth reaches 15 GHz from 27-42 GHz covering almost the entire Ka band; the minimum noise figure (NF) is 4.2 d B and the average NF is in the band 27-42 GHz 5.1 d B for S11 and S11 is less than -11 d for the entire test band. The input of the third-order intercept point (IIP3) at B.40 GHz is +2 d Bm. The DC power consumption of the entire circuit is 5.3 mW. The area of the chip including the pad is 0.58 mm × 0.48 mm.