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采用等离子体化学汽相淀积技术生长ａＧｅｘＳｉ１－ｘ∶Ｈ薄膜，然后在８００℃，１０５Ｐａ下于传统开口管式炉中氧化热处理，制备嵌埋在ＳｉＯ２中的ｎｃＧｅ微晶粒．利用傅里叶变换红外光谱、喇曼光谱和Ｘ射线衍射谱分析样品的微结构，研究ａＧｅｘＳｉ１－ｘ∶Ｈ薄膜的氧化过程中发生的化学和物理变化，并用平衡态化学反应热理论加以解释．在某些样品中观察到室温下的光致发光现象，采用Ｂｒｕｓ电子空穴三维限制模型，结合ｎｃＧｅ的微结构，认为观察到的光致发光现象与嵌埋在ＳｉＯ２中的ｎｃＧｅ量子尺寸效应有关
The a-GexSi1-x: H thin film was grown by plasma chemical vapor deposition and then oxidized and heat-treated at 800 ℃ and 105Pa in a conventional open tube furnace to prepare ncGe micro-crystal embedded in SiO2. The chemical and physical changes of the a-GexSi1-x: H thin films during oxidation were investigated by Fourier transform infrared spectroscopy, Raman spectroscopy and X-ray diffraction. The microstructures of the samples were studied by using equilibrium state chemical reaction heat theory Explanation. Photoluminescence at room temperature was observed in some samples. The Brus electron-hole three-dimensional confinement model was used in combination with the microstructure of nc-Ge. The observed photoluminescence phenomenon and the nc- Ge quantum size effect