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我们利用透射X射线形貌技术观察了 n-GaAs衬底及 GaAs-Al_xGa_(1-x)AsDH外延片中的晶体缺陷,并且用高分辨率形貌技术与金相技术进行了对照.证明了普通X射线形貌像中的衬度是由晶体缺陷形成的.根据X射线形貌像,我们对n-GaAs衬底及GaAs-AlxGa_(1-x)As DH外延片中的缺陷密度作出了评价. 采用常规的DH液相外延技术及质子轰击条形的器件工艺,将我们研究的衬底制成了激光器.测试结果表明:器件的成品率和质量与我们对衬底中缺陷密度的评价完全对应.利用X射线形貌技术挑选出的低缺陷密度的衬底,我们获得了很多性能优良的长寿命激光器.
We observed the crystal defects in n-GaAs substrates and GaAs-Al_xGa_ (1-x) AsDH epilayers by transmission X-ray topography and compared them with metallographic techniques using high-resolution topography. The contrast in normal X-ray topography is caused by crystal defects. According to the X-ray topography, we have made the defect densities in n-GaAs substrates and GaAs-AlxGa 1-x As DH epitaxial wafers The substrate of our study was made into a laser using conventional DH liquid phase epitaxy and proton bombardment of the device process.The results show that the yield and quality of the device and our evaluation of the defect density in the substrate Completely corresponding to the use of X-ray topography of the selected low defect density of the substrate, we get a lot of good performance long-life laser.