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作为第三代宽禁带半导体材料的典型代表,GaN材料在各个应用领域的研究工作都受到了高度的重视。概述了基于AlGaN/GaN HEMT结构的新型高压、高频、低损耗电力开关器件的最新研究进展。从器件的结构特征入手,详细介绍了改善器件击穿特性的途径、高频开关特性的研究情况、Si衬底上AlGaN/GaN HEMT结构材料的生长、增强型器件的制备技术和功率集成电路的研究等几个国际上的热点问题。最后,对该项研究面临的问题及未来的发展趋势做了展望。
As a typical representative of the third generation of wide bandgap semiconductor materials, research on GaN materials in various fields of application has received a great deal of attention. The latest research progress of new high voltage, high frequency, low loss power switching devices based on AlGaN / GaN HEMT structures is summarized. Starting with the structural characteristics of the device, the ways to improve the breakdown characteristics of the device, the research of high frequency switching characteristics, the growth of AlGaN / GaN HEMT structure material on Si substrate, the preparation technology of enhanced device and the power integrated circuit Research and several other international hot issues. Finally, the paper analyzes the problems that the research faces and the future development trend.