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由于 MOS 集成电路比双极集成电路制造工艺简单,容易高度集成化,其应用范围正在愈来愈广泛。对于 MOS 集成电路使用中的故障,主要是栅极氧化膜的破坏。MOS 集成电路在构造上,具有10~9～10~(14)欧姆高的输入阻抗,特别是氧化膜厚度薄到1000～2000埃时,因其氧化膜的最大电场强度为8×10~6伏/厘米,当电压达到80～160伏时即被破坏。实际上,人的衣服等所带的静电也已具有几千伏,关于器件设计、工艺制造,筛选及使用上的注意问题叙述如下。
Because MOS integrated circuits are easier and more highly integrated than bipolar integrated circuits, their applications are becoming more widespread. MOS integrated circuit for the use of the fault, mainly the destruction of the gate oxide film. The MOS integrated circuit has an input impedance of 10~9~10 ~ (14) ohm high in structure, especially when the thickness of the oxide film is as thin as 1000~2000 Å, the maximum electric field strength of the oxide film is 8 × 10 -6 V / cm, when the voltage reaches 80 ~ 160 volts is destroyed. In fact, the static electricity brought by people's clothes and the like also has a few thousand volts. The following is a brief description of the problems in device design, manufacturing, screening and using.