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用传输矩阵法模拟计算了AlGaInP发光二极管(LED)不同表面结构的光学特性,用等离子体增强化学气相沉积(PECVD)或磁控溅射掺铟氧化锡(ITO)设备,在带有DBR结构的外延衬底上制备出具有不同表面层结构的LED。通过实验结果对比表明,表面生长λ/4nSiON加λ/2nITO增透膜结构复合增透膜的LED,器件光学性能提高最佳,在20 mA注入电流下,光强和光通量分别达到141.7 mcd和0.473 3 lm。比同样结构的无增透膜LED轴向光强和光通量分别提高138%和91%。
The optical properties of different surface structures of AlGaInP LEDs were calculated by transmission matrix method. The structures of AlGaInP LEDs with DBR structure were characterized by PECVD or magnetron sputtering. The epitaxial substrates were prepared with different surface layer structure of the LED. The comparison of the experimental results shows that the optical properties of the devices with the optimized growth of λ / 4nSiON plus λ / 2nITO antireflection coatings are best, and the light intensity and luminous flux are 141.7 mcd and 0.473 at 20 mA injection current respectively 3 lm. Compared with the same structure without anti-reflective film LED axial light intensity and luminous flux increased by 138% and 91%.