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研究了低压沟槽功率MOSFET(<100V)在不同耐压下导通电阻最优化设计的差别。给出了确定不同耐压MOSFET参数的方法,简要分析了沟槽MOSFET的导通电阻;利用Sentaurus软件对器件的电性能进行模拟仿真。理论和仿真结果均表明,耐压高的沟槽MOSFET的导通电阻比耐压低的沟槽MOSFET更接近理想导通电阻,并且,最优导通电阻和最优沟槽宽度随着耐压的提高而逐渐增大。
The difference between the design optimization of on-resistance for low-voltage trench power MOSFETs (<100V) at different withstand voltages was investigated. A method to determine the parameters of MOSFET with different withstand voltage is given. The on-resistance of the trench MOSFET is briefly analyzed. The Sentaurus software is used to simulate the electrical performance of the device. Both theoretical and simulation results show that the trench MOSFET with high withstand voltage is closer to the ideal on-resistance than the trench MOSFET with lower withstand voltage, and the optimum on-resistance and the optimal trench width are more favorable with the withstand voltage Increase and gradually increase.