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由于非晶硅本身的结构特点,短程有序,从而其中存在大量的界面态及晶粒间界,这些缺陷在导带底和价带顶附近以及禁带中央产生附加能带,当电子或空穴处于该能带时,其导电行为区别于正常能带中的载流子,从物理学来看,就是晶粒间界等缺陷对载流子的俘获作用,被俘获的载流子只能在晶粒局部运动,一
Due to the structural characteristics of amorphous silicon itself, short-range order, which there is a large number of interface states and grain boundaries, these defects in the conduction band at the bottom of the valence band and the band near the central band and generate additional energy band, when the electronic or empty When the hole is in the energy band, the conductance of the hole is different from that of the carrier in the normal energy band. From a physical point of view, it is the trapping of carriers by defects such as grain boundaries. The trapped carriers can only Particle movement in the grain, one